| PART |
Description |
Maker |
| CMPZ4615 CMPZ4616 CMPZ4614 CMPZ4617 CMPZ4618 |
350mW LOW NOISE ZENER DIODE 5% TOLERANCE
VARISTOR, 1206 18VDC 0.4JVARISTOR, 1206 18VDC 0.4J; Voltage, varistor at 1mA:25.5V; Voltage, clamping max:42V; Voltage, clamping 8/20us max:40V; Energy, transient 10/1000us max:0.4J; Current, peak 8/20us max:150A; Voltage rating,
|
Central Semiconductor Corp.
|
| SRF1020111111 SR1050 SR1060 SRF10A0 SRF1080 SR1020 |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 10.0 A.
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A.
|
Shanghai Sunrise Electronics
CHENYI[Shanghai Lunsure Electronic Tech]
Chenyi Electronics
|
| BUV94 BUV95 BDY46 |
RDS/RBDS processor
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:660Vrms; Voltage Rating DC, Vdc:850VDC; Peak Surge Current (8/20uS), Itm:6500A; Clamping Voltage 8/20us Max :1650V; Peak Energy (10/1000uS):250J; Capacitance, Cd:400pF
|
|
| BD814 BD844 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|02AA
|
Teridian Semiconductor, Corp.
|
| P2353AB P2353AA P2300EC P0602AARP P1402AARP P1602A |
MCU CMOS 64 LD 33MHZ 8K EPRM, -40C to 85C, 64-TQFP, TRAY
MCU CMOS 68 LD 33MHZ 8K EPRM, 0C to 70C, 68-PLCC, TUBE
MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-PLCC, TUBE
18LD 20MHZ .5K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE
SIDAC|77V V(BO) MAX|800MA I(S)|TO-220VAR
MCU CMOS 18 LD 20MHZ 1K FLASH, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC|160V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|180V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|220V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|300V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|350V V(BO) MAX|800MA I(S)|TO-220VAR
20LD 4MHZ 1K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, TUBE
MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SPDIP, TUBE
MCU CMOS 44 LD 25MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY
SIDAC|180V V(BO) MAX|800MA I(S)|TO-92VAR
MCU CMOS 20LD 2K FLASH, 0C to 70C, 20-SSOP 208mil, T/R
SIDAC|220V V(BO) MAX|800MA I(S)|TO-92VAR
MCU CMOS 18LD 2K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE
SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
18LD 20MHZ 2K EPRM/128 EEPROM, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC|98V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|400V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|350V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
SIDAC|40V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|210V V(BO) MAX|800MA I(S)|TO-220VAR
20LD 20MHZ 2K FLASH, -40C to 85C, 20-SSOP 208mil, T/R
20LD 4MHZ 2K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, T/R
MCU CMOS 18 LD LOW PWR, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|DO - 214AA
SIDAC的| 77V V（下公报）最大| 800mA的我（县）|220VAR
SIDAC的| 40V的五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 130V五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 180V五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 180V五（公报）最大| 800mA的我（县）|20VAR
SIDAC的| 220五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 40 LD 4MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 10MHZ 8K OTP, 0C to 70C, 44-PLCC, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
SIDAC|98V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 98V V（下公报）最大| 800mA的我（县）|DO - 214AA
SIDAC|25V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 25V的五（公报）最大| 800mA的我（县）|DO - 214AA
SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 220五（公报）最大| 800mA的我（县）|DO - 214AA
MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 125C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
14 PIN, 4KB FLASH, 128 RAM, 12 I/O, -40C to 85C, 16-QFN, T/R SIDAC的| 130V五（公报）最大| 800mA的我（县）|20VAR
14 PIN, 1.5KB STD FLASH, 67 RAM, 12 I/O, PB FREE, -40C to 85C, 14-SOIC 150mil, T/R SIDAC的| 98V V（下公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 40 LD 40MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to 125C, 44-MQFP, TRAY SIDAC的| 25V的五（公报）最大| 800mA的我（县）|2VAR
SIDAC|400V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 400V五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 68 LD 16MHZ 16K EPRM, 0C to 70C, 68-PLCC, TUBE SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SOIC 300mil, T/R SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR
SIDAC|250V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 250V五（公报）最大| 800mA的我（县）|20VAR
|
Littelfuse, Inc.
Ohmite Mfg. Co.
Analog Devices, Inc.
Vishay Intertechnology, Inc.
Molex, Inc.
Vicor, Corp.
TE Connectivity, Ltd.
Marktech Optoelectronics
Intel, Corp.
|
| MDE-34S951K MDE-34S911K |
950V; max peak current:40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square
910V; max peak current:40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square
|
MDE Semiconductor
|
| IDT70V5378S166BCI IDT70V5378S166BGI IDT70V5388S166 |
Ultrasonic Sensor; Sensing Range Max:500mm; Sensor Terminals:Quick Disconnect; Sensor Output Type:PNP; Frequency:300kHz; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensing Range Min:50mm; Supply Voltage:30VDC
Ultrasonic Sensor; Sensing Range Max:500mm; Sensor Terminals:Cable; Sensor Output Type:PNP; Frequency:300kHz; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensing Range Min:50mm; Supply Voltage:30VDC
Proximity Sensor; Sensor Input Type:Optical; Sensing Range Max:150mm; Leaded Process Compatible:No; Output Type:PNP; Peak Reflow Compatible (260 C):No
3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM 32K X 18 FOUR-PORT SRAM, 3 ns, PBGA256
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| ST25E64EM3TR ST24E64 ST24E64EB1TR ST24E64EB6TR ST2 |
(ST24E64 / ST25E64) SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 64K (8K x 8) EEPROM
Power Supply Controller IC; Package/Case:28-SSOP; Supply Voltage Max:5.5V; Leaded Process Compatible:No; Output Voltage Max:3.3V; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount 串行I2C总线延长64K的（8K的8）EEPROM的寻址兼容
|
http://
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| MDE-32D821K |
820V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc
|
MDE Semiconductor
|
| LS31801111 LS3180-GK LS3180-H LS3180-J LS3180-JM L |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:25mA; Current, It av:8A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes T1毫米）广角发光二极管
T1 (3mm) WIDE ANGLE LED LAMP T1毫米）广角发光二极管
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
|
